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Related Concept Videos

Electrostatic Boundary Conditions in Dielectrics01:27

Electrostatic Boundary Conditions in Dielectrics

When an electric field passes from one homogeneous medium to another, crossing the boundary between the two mediums imparts a discontinuity in the electric field. This results in electrostatic boundary conditions that depend on the type of mediums the field propagates through.
Consider a case where both the mediums across a boundary are two different dielectric materials. Recall that the electric field and electric displacement are proportional and related through the material's permittivity.
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Electrostatic Boundary Conditions01:16

Electrostatic Boundary Conditions

Consider an external electric field propagating through a homogeneous medium. When the electric field crosses the surface boundary of the medium, it undergoes a discontinuity. The electric field can be resolved into normal and tangential components. The amount by which the field changes at any boundary is given by the difference between the field components above and below the surface boundary.
The surface integral of an electric field is given by Gauss's law in integral form and is related to...
P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
Electric Field at the Surface of a Conductor01:26

Electric Field at the Surface of a Conductor

Consider a conductor in electrostatic equilibrium. The net electric field inside a conductor vanishes, and extra charges on the conductor reside on its outer surface, regardless of where they originate.
In the 19th century, Michael Faraday conducted the famous ice pail experiment to prove that the charges always reside on the surface of a conductor. The experimental set-up consists of a conducting uncharged container mounted on an insulating stand. The outer surface of the container is...

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Related Experiment Video

Updated: Jul 14, 2026

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

Electron turbulence at nanoscale junctions.

Neil Bushong1, John Gamble, Massimiliano Di Ventra

  • 1Department of Physics, University of California, San Diego, La Jolla, California 92093-0319, USA. bushong@physics.ucsd.edu

Nano Letters
|May 23, 2007
PubMed
Summary

Electron liquid in nanostructures can behave like a classical fluid, exhibiting turbulence at high currents. This study reveals unexpected electron dynamics and transport properties in nanoscale systems.

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Last Updated: Jul 14, 2026

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

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Published on: January 19, 2018

Studying Dynamic Processes of Nano-sized Objects in Liquid using Scanning Transmission Electron Microscopy
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Area of Science:

  • Condensed matter physics
  • Quantum fluid dynamics
  • Nanoscale transport phenomena

Background:

  • Electron transport in nanostructures can be analogized to classical fluid dynamics.
  • The potential for nonlinear dynamical effects, like turbulence, in electron liquids is an open question.

Purpose of the Study:

  • To investigate the extent to which electron liquid behavior in nanojunctions mimics classical fluid dynamics.
  • To explore the possibility of turbulent electron flow in nanoscale systems.

Main Methods:

  • Ab initio theoretical study of electron dynamics.
  • Analysis of electron flow in nanojunctions under varying current conditions.

Main Results:

  • Electron dynamics in nanojunctions show strong similarities to classical fluid behavior.
  • A transition from laminar to turbulent electron flow is observed with increasing current.
  • This transition correlates with increasing Reynolds numbers, analogous to classical fluid dynamics.

Conclusions:

  • The electron liquid can exhibit nonlinear dynamical effects, including turbulence, in nanostructures.
  • Classical fluid dynamics concepts, including turbulence, are applicable to electron transport at the nanoscale.
  • Findings offer new insights into the fundamental transport properties of nanoscale systems.