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[A study of depositing amorphous SiOx films vis magnetron sputtering by FTIR method]
Shen-wei Wang1, Li-xin Yi, Meng-chan Su
1Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China.
Guang Pu Xue Yu Guang Pu Fen Xi = Guang Pu
|June 9, 2007
Summary
Magnetron sputtering creates amorphous silicon oxide (SiOx) films with unique structures. Increased sputtering power leads to specific bond formations and defects, influencing the films' optical properties.
Area of Science:
- Materials Science
- Solid State Physics
- Thin Film Technology
Context:
- Amorphous silicon oxide (SiOx) films are crucial in microelectronics and optical devices.
- Understanding film structure is key to controlling material properties.
- Magnetron sputtering is a common technique for SiOx deposition.
Purpose:
- To investigate the structural evolution of amorphous SiOx films deposited by magnetron sputtering.
- To correlate sputtering power with film composition and defect formation.
- To identify the origin of infrared absorption bands in SiOx films.
Summary:
- Amorphous SiOx films were deposited on silicon substrates using magnetron sputtering.
- Fourier transform infrared spectroscopy revealed three absorption bands.
- Increased sputtering power promoted the formation of Si-Oy-Si(4-y) structures, Si6 rings, and non-bridging oxygen hole center defects.
Impact:
- The study elucidates the relationship between deposition parameters and the microstructure of SiOx films.
- Identifies specific structural components responsible for observed infrared absorption.
- Provides insights for tailoring SiOx film properties for specific applications through controlled sputtering.
