Related Experiment Video
Updated: Jul 14, 2026
09:49
In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
Study on threshold behavior of operation voltage in metal filament-based polymer memory
Won-Jae Joo1, Tae-Lim Choi, Kwang-Hee Lee
1Display Device and Material Laboratory, Samsung Advanced Institute of Technology, P.O. Box 111, Suwon 440-600, Korea. wj.joo@samsung.com
The Journal of Physical Chemistry. B
|June 16, 2007
Summary
In organic memory devices, a high electric field (170 MV/m) is needed to form conductive filaments. This threshold is set by copper ionization, crucial for memory switching.
Area of Science:
- Materials Science
- Organic Electronics
- Device Physics
Background:
- Metal filament formation is key to organic memory device operation.
- Understanding the precise electrical and physical mechanisms governing filament formation is essential for device optimization.
Purpose of the Study:
- To investigate the threshold electric field strength required for filament formation in Cu/P3HT/Al organic memory devices.
- To elucidate the role of copper ionization and ion drift in the memory switching mechanism.
- To analyze the influence of electric field strength and temperature on device performance.
Main Methods:
- Fabrication and electrical characterization of Cu/P3HT/Al memory devices.
- Application of positive voltage pulses exceeding a threshold electric field.
- Secondary Ion Mass Spectroscopy (SIMS) for elemental analysis.
- A novel pulse operation method to determine field strength for ion drift.
Main Results:
- A threshold electric field strength of 170 MV/m is necessary for filament formation.
- Copper ions are generated and drift into the polymer layer under positive voltage, confirmed by SIMS.
- The ion drift process requires a field strength of 100 MV/m, determined independently.
- Copper ionization was identified as the limiting factor for the overall threshold field strength.
Conclusions:
- The threshold electric field for filament formation in Cu/P3HT/Al devices is dictated by copper ionization.
- The study provides a method to independently determine field strengths for different processes within the memory switching mechanism.
- Device performance is dependent on applied field strength and operating temperature.
Related Concept Videos
01:27Biasing of Metal-Semiconductor Junctions
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
01:25MOS Capacitor
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
01:17Characteristics of MOSFET
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable quicker...
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable quicker...
01:24Metal-Semiconductor Junctions
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
01:12Fermi Level Dynamics
The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...