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Updated: Jul 14, 2026
All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
Nanometer-scale dielectric imaging of semiconductor nanoparticles: size-dependent dipolar coupling and contrast
Zee Hwan Kim1, Sung-Hyun Ahn, Bing Liu
1Department of Chemistry and Center for Electro- and Photo-Responsive Molecules, Korea University, Anam-Dong, Seongbuk-Gu, Seoul 136-701, Republic of Korea.
Abstract:
Scattering-type apertureless near-field microscopy (ANSOM) provides high-resolution dielectric maps of indium gallium nitride (InGaN) semiconductor nanoparticles at visible (633 nm) wavelengths. A specific size-dependent contrast reversal is observed in the ANSOM images of InGaN nanoparticles grown on a layer of gallium nitride (GaN). Model calculations demonstrate that the observed contrast reversal is the result of the competition between the tip-particle versus tip-substrate dipolar coupling.
