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P-N junction

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

Biasing of P-N Junction

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...

Biasing of Metal-Semiconductor Junctions

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

Metal-Semiconductor Junctions

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...

Semiconductors

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...

Schottky Barrier Diode

Schottky Barrier Diode

Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...

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Related Experiment Video

Updated: Jul 13, 2026

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

Critical current 0-pi transition in designed Josephson Quantum Dot junctions.

H Ingerslev Jørgensen¹, T Novotný, K Grove-Rasmussen

¹Nano-Science Center, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen Ø, Denmark. hij@fys.ku.dk

|July 20, 2007

Summary

We developed quantum dot Josephson junctions to measure supercurrent. These devices show strong gate control of critical current and a 0-pi transition, aligning with theoretical predictions.

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Area of Science:

Quantum physics
Condensed matter physics
Nanotechnology

Background:

Josephson junctions are crucial for quantum electronic devices.
Quantum dots offer tunable electronic properties.
Measuring supercurrent accurately is key to understanding quantum phenomena.

Purpose of the Study:

To design and characterize quantum dot-based Josephson junctions for supercurrent measurement.
To investigate the gate modulation of critical current in these devices.
To study the 0-pi transition in quantum dot Josephson junctions.

Main Methods:

Fabrication of quantum dot based Josephson junctions.
High-accuracy fitting of current-voltage characteristics.
Analysis of Coulomb blockade oscillations.
Experimental observation of the 0-pi transition.

Main Results:

Successful design and measurement of quantum dot Josephson junctions.
Determination of the critical current magnitude via current-voltage characteristics.
Observation of strong gate modulation of critical current across multiple Coulomb blockade oscillations.
Evidence of the 0-pi transition, where critical current crosses zero near resonance.

Conclusions:

Quantum dot Josephson junctions are effective for measuring supercurrent.
Gate voltage provides significant control over the critical current.
The observed 0-pi transition is consistent with theoretical models, validating the device's behavior.