Related Experiment Video
Updated: Jul 13, 2026

10:17
20 mJ, 1 ps Yb:YAG Thin-disk Regenerative Amplifier
Published on: July 12, 2017
Fast rise time, long pulse width, kilohertz repetition rate Q-switch driver
Thomas P Rutten1, Neville Wild, Peter J Veitch
1Department of Physics, The University of Adelaide, Adelaide, South Australia 5005, Australia. thomas.rutten@adelaide.edu.au
The Review of Scientific Instruments
|August 4, 2007
Summary
A novel Pockels cell Q-switch driver generates high-voltage electrical pulses with fast rise times and long duration. This versatile circuit exceeds 1 kHz repetition rates, suitable for Q-switched lasers and regenerative amplifiers.
Area of Science:
- Laser physics and optics
- Electrical engineering
- Pulsed power systems
Background:
- Q-switched lasers and regenerative amplifiers require precise high-voltage pulse generation for optimal performance.
- Existing drivers may lack versatility in pulse characteristics or repetition rate capabilities.
Purpose of the Study:
- To present a versatile Pockels cell Q-switch driver.
- To demonstrate the generation of high-voltage electrical pulses with specific characteristics (fast rise time, long duration).
- To achieve high repetition rates for advanced laser applications.
Main Methods:
- Design and implementation of a simple, adaptable electrical circuit.
- Integration of the driver with Pockels cells for laser Q-switching.
- Characterization of pulse parameters (rise time, duration, repetition rate).
Main Results:
- The driver successfully generates high-voltage electrical pulses.
- Achieved fast rise times and long pulse durations.
- Demonstrated a repetition rate exceeding 1 kHz.
- The circuit proved easily adaptable to various laser systems.
Conclusions:
- The developed Pockels cell Q-switch driver is versatile and effective.
- It meets the demanding requirements for high-voltage pulse generation in advanced laser systems.
- Its simplicity and adaptability make it a valuable tool for researchers and engineers.
Related Concept Videos
Switching of BJT
Switching behavior in Bipolar Junction Transistors (BJTs) is a fundamental aspect utilized in various electronic circuits, particularly for digital logic applications like switches and amplifiers. In a typical switching circuit, a BJT alternates between cut-off and saturation modes, corresponding to the "off" and "on" states, respectively, thus behaving like an ideal switch.
Cut-off Mode ("Off" State): In this state, both the emitter-base and collector-base junctions are reverse-biased. The...
Cut-off Mode ("Off" State): In this state, both the emitter-base and collector-base junctions are reverse-biased. The...
MOSFET: Enhancement Mode
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
Applications of RC Circuits
A relaxation oscillator is one of the applications of RC circuits. A neon lamp relaxation oscillator comprises a capacitor, a resistor, a voltage source, and a lamp. The lamp acts like an open circuit, with infinite resistance until the potential difference across the lamp reaches a specific voltage. At that voltage, the lamp acts like a short circuit with zero resistance, and the capacitor discharges through the lamp, thus producing light. Once the capacitor is fully discharged through the...
MOSFET
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
In an n-MOSFET, the structure includes n-type source and drain...
NMR Spectrometers: Radiofrequency Pulses and Pulse Sequences
A pulse is a short burst of radio waves distributed over a range of frequencies that simultaneously excites all the nuclei in the sample. Upon passing a radio frequency pulse along the x-axis, the nuclei absorb energy corresponding to their Larmor frequencies and achieve resonance. This shifts the net magnetization vector from the z-axis toward the transverse plane. This angle of rotation of the magnetization vector, or the flip angle, is proportional to the duration and intensity of the pulse.

