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Updated: Jul 13, 2026

Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing
Published on: June 9, 2023
Oxygen vacancies in high dielectric constant oxide-semiconductor films
Supratik Guha1, Vijay Narayanan
1IBM T.J. Watson Research Center, Yorktown Heights, NY 10598, USA.
Abstract:
We provide evidence that the oxygen vacancy is a dominant intrinsic electronic defect in nanometer scaled hafnium oxide dielectric films on silicon, relevant to microelectronics technology. We demonstrate this by developing a general model for the kinetics of oxygen vacancy formation in metal-ultrathin oxide-semiconductor heterostructures, calculating its effect upon the band bending and interfacial oxidation rates and showing good experimental agreement with the predictions.
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