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Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
Published on: March 24, 2019
Dynamic spin-polarized resonant tunneling in magnetic tunnel junctions
Casey W Miller1, Zhi-Pan Li, Ivan K Schuller
1Department of Physics, University of California, San Diego, 9500 Gilman Drive, La Jolla, California 92093, USA.
Abstract:
Precisely engineered tunnel junctions exhibit a long sought effect that occurs when the energy of the electron is comparable to the potential energy of the tunneling barrier. The resistance of metal-insulator-metal tunnel junctions oscillates with an applied voltage when electrons that tunnel directly into the barrier's conduction band interfere upon reflection at the classical turning points: the insulator-metal interface and the dynamic point where the incident electron energy equals the potential barrier inside the insulator. A model of tunneling between free electron bands using the exact solution of the Schrödinger equation for a trapezoidal tunnel barrier qualitatively agrees with experiment.
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