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Mass Spectrometers01:16

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This lesson details the instrumentation of a mass spectrometer—a physical instrument to perform mass spectrometry on analyte molecules and record the characteristic mass spectra. This is achieved via three chief functions:
Confocal Fluorescence Microscopy01:16

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Mass Analyzers: Common Types

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Related Experiment Video

Updated: Jul 7, 2026

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
12:19

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

Published on: April 4, 2017

Quantum cascade laser.

J Faist, F Capasso, D L Sivco

    Science (New York, N.Y.)
    |April 22, 1994
    PubMed
    Summary
    This summary is machine-generated.

    Researchers demonstrated a novel semiconductor injection laser using quantum cascade structures. This quantum cascade laser (QCL) emits infrared light, offering tunable wavelengths for various applications.

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    Area of Science:

    • Solid State Physics
    • Quantum Electronics
    • Semiconductor Devices

    Background:

    • Traditional diode lasers have limitations in wavelength tunability and power.
    • Band structure engineering and molecular beam epitaxy enable novel semiconductor device designs.

    Purpose of the Study:

    • To demonstrate a new type of semiconductor injection laser based on quantum structures.
    • To achieve laser action in the mid-infrared region using engineered quantum wells.

    Main Methods:

    • Utilizing molecular beam epitaxy to grow quantum semiconductor structures.
    • Designing heterostructures with engineered band structures for controlled electron transitions.
    • Achieving population inversion via tunneling in coupled quantum wells.

    Main Results:

    • Demonstrated a semiconductor injection laser operating at 4.2 micrometers.
    • Observed peak powers exceeding 8 milliwatts in pulsed operation.
    • Confirmed laser action through spectral narrowing above threshold.

    Conclusions:

    • The demonstrated quantum cascade laser offers a fundamentally different approach to semiconductor lasers.
    • Wavelength tunability from mid-infrared to submillimeter waves is achievable within the same material system.
    • This technology holds promise for applications requiring specific infrared wavelengths.