High-power GaN diode-pumped continuous wave Pr3+-doped LiYF4 laser
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Updated: Jul 12, 2026
20 mJ, 1 ps Yb:YAG Thin-disk Regenerative Amplifier
Published on: July 12, 2017
Kohei Hashimoto1, Fumihiko Kannari
1Department of Electronics and Electrical Engineering, Faculty of Science and Technology, Keio University, 3-14-1, Hiyoshi, Kohoku-ku, Yokohama 223-8522, Japan.
Abstract:
A cw Pr(3+):LiYF(4) laser at 639 nm pumped by a high-power GaN laser diode (444 nm) is demonstrated. The highest laser power of 112 mW is achieved with an optical-optical conversion efficiency of 33.5%. Characteristics of this laser at elevated temperatures are also investigated for practical applications such as a laser projector.
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