High-power GaN diode-pumped continuous wave Pr3+-doped LiYF4 laser

Area of Science:

• Optics and Photonics
• Laser Physics
• Materials Science

Background:

• Praseodymium-doped materials are promising for visible lasers.
• Gallium Nitride (GaN) laser diodes offer efficient pumping solutions.
• LiYF4 (YLF) is a suitable host crystal for rare-earth ions.

Purpose of the Study:

• To demonstrate a continuous-wave (cw) Pr(3+):LiYF4 laser operating at 639 nm.
• To investigate the performance of this laser when pumped by a GaN laser diode.
• To evaluate the laser's characteristics at elevated temperatures for practical applications.

Main Methods:

• Utilizing a Pr(3+):LiYF4 crystal as the gain medium.
• Employing a high-power GaN laser diode emitting at 444 nm for optical pumping.
• Measuring laser output power and optical-optical conversion efficiency.
• Characterizing laser performance under varying temperature conditions.

Main Results:

• Successfully demonstrated a cw Pr(3+):LiYF4 laser at 639 nm.
• Achieved a maximum laser output power of 112 mW.
• Obtained a high optical-optical conversion efficiency of 33.5%.
• Investigated laser performance at elevated temperatures.

Conclusions:

• The Pr(3+):LiYF4 laser pumped by a GaN diode is a viable and efficient red laser source.
• The demonstrated efficiency and temperature characteristics suggest potential for laser projector applications.
• Further research can optimize performance for commercial viability.