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Artificially structured thin-film materials and interfaces.

V Narayanamurti

    Science (New York, N.Y.)
    |February 27, 1987
    PubMed
    Summary
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    Advanced crystal growth techniques enable atomic-scale material structuring, leading to novel physical phenomena and devices. This review covers variable band gap semiconductors and multilayered structures using advanced characterization.

    Area of Science:

    • Materials Science
    • Condensed Matter Physics
    • Nanotechnology

    Background:

    • Atomic-scale artificial material structuring is advancing rapidly.
    • Advanced crystal growth methods enable precise material design.
    • This has led to new physical phenomena and device classes.

    Purpose of the Study:

    • To review the growth of variable band gap materials in semiconductors.
    • To present recent studies on multilayered structures and interfaces.
    • To highlight the role of advanced characterization techniques.

    Main Methods:

    • Utilizing advanced crystal growth methods: molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD).
    • Employing advanced characterization techniques: high-resolution transmission electron microscopy (HRTEM) and scanning tunneling microscopy (STM).

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  • Focusing on technologically important semiconductors like Gallium Arsenide (GaAs), Indium Phosphide (InP), and Silicon (Si).

    • Main Results:

    • Demonstration of precise control over material properties through atomic-scale structuring.
    • Observation of unexpected physical phenomena in engineered materials.
    • Successful creation of new classes of electronic and optoelectronic devices.

    Conclusions:

    • Advanced crystal growth and characterization are crucial for developing novel materials.
    • Engineered semiconductor heterostructures offer unique physical properties.
    • This field promises significant advancements in materials science and device technology.