Imaging reflectometry in situ

Area of Science:

• Materials Science
• Optical Engineering
• Surface Science

Background:

• Accurate monitoring of thin film processes is crucial for material quality.
• Existing methods may lack real-time, in-situ capabilities for detailed morphological analysis.

Purpose of the Study:

• To present an innovative in situ optical monitoring technique for thin film deposition and etching.
• To enable real-time characterization of thin film morphology and optical parameters.

Main Methods:

• Utilizes a CCD camera to record intensity maps across a range of wavelengths (300-800 nm).
• Extracts point-specific reflectance spectra from intensity maps.
• Fits experimental reflectance spectra to theoretical models for morphological analysis.

Main Results:

• Successfully obtained reflectance spectra at individual points on the sample surface.
• Generated maps of thin film morphology and optical parameters.
• Demonstrated temporal development during technological processes.

Conclusions:

• The developed method provides in situ, real-time optical monitoring of thin film processes.
• It allows for detailed characterization of thin film growth (e.g., silicon nitride, silicon oxide) and etching (e.g., SiO2).
• This technique offers valuable insights into thin film behavior during fabrication.