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Related Experiment Video

Updated: Jul 11, 2026

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
09:06

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Published on: March 24, 2019

Epitaxial cuprate superconductor/ferroelectric heterostructures.

R Ramesh, A Inam, W K Chan

    Science (New York, N.Y.)
    |May 17, 1991
    PubMed
    Summary

    Epitaxial ferroelectric thin films of bismuth titanate (Bi4Ti3O12) and copper oxide (Bi2Sr2CuO6+x) were successfully grown. These novel heterostructures show promise for nonvolatile memory applications.

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    Epitaxial Growth of Perovskite Strontium Titanate on Germanium via Atomic Layer Deposition
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    Epitaxial Growth of Perovskite Strontium Titanate on Germanium via Atomic Layer Deposition

    Published on: July 26, 2016

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    Epitaxial Growth of Perovskite Strontium Titanate on Germanium via Atomic Layer Deposition
    09:45

    Epitaxial Growth of Perovskite Strontium Titanate on Germanium via Atomic Layer Deposition

    Published on: July 26, 2016

    Area of Science:

    • Materials Science
    • Solid State Physics
    • Thin Film Technology

    Background:

    • Ferroelectric thin films are crucial for nonvolatile memory devices.
    • Developing lattice-matched epitaxial heterostructures is key for advanced electronic applications.

    Purpose of the Study:

    • To grow and characterize novel ferroelectric thin-film heterostructures.
    • To evaluate their potential for nonvolatile memory applications.

    Main Methods:

    • Pulsed laser deposition for growing Bi4Ti3O12/Bi2Sr2CuO6+x heterostructures.
    • X-ray diffraction and Rutherford backscattering for structural and compositional analysis.
    • Electrical characterization of ferroelectric properties.

    Main Results:

    • Epitaxial c-axis oriented films were grown on SrTiO3, LaAlO3, and MgAl2O4 substrates.
    • Films exhibited ferroelectric behavior with a remanent polarization of 1.0 µC/cm² and a coercive field of 2.0 x 10^5 V/cm.
    • Successful integration with various superconducting bottom electrodes (YBCO, BSCCO) was demonstrated.

    Conclusions:

    • The synthesized Bi4Ti3O12/Bi2Sr2CuO6+x heterostructures are ferroelectric and epitaxially grown.
    • These films are promising candidates for novel, lattice-matched ferroelectric film/electrode heterostructures in nonvolatile memory devices.