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Control of magnetic anisotropy in (Ga,Mn)as by lithography-induced strain relaxation

J Wenisch1, C Gould, L Ebel

  • 1Physikalisches Institut (EP3), Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany.

Physical Review Letters
|October 13, 2007
PubMed

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