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Updated: Jul 10, 2026

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
Published on: June 23, 2018
Design and evaluation of a 2D array PIN photodiode bump bonded to readout IC for the low energy x-ray detector
Sunwoo Yuk1, Shin-Woong Park, Yun Yi
1Dept. of Electron. & Inf. Eng., Korea Univ., Seoul, 136-705, South Korea. sunwoo@korea.ac.kr
Abstract:
A 2D array radiation sensor, consisting of an array of PIN photodiodes bump bonded to readout integrated circuit (IC), has been developed for operation with low energy X-rays. The PIN photodiode array and readout IC for this system have been fabricated. The main performance measurements are the following: a few pA-scale leakage current, 350 pF junction capacitance, 30 microm-depth depletion layer and a 250 microm intrinsic layer at zero bias. This PIN photodiode array and readout IC were fabricated using a PIN photodiode process and standard 0.35 microm CMOS technology, respectively. The readout circuit is operated from a 3.3 V single power supply. Finally, a 2D array radiation sensor has been developed using bump bonding between the PIN photodiode and the readout electronics.
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