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Measurement of Coherence Decay in GaMnAs Using Femtosecond Four-wave Mixing
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Local electronic structure near Mn acceptors in InAs: surface-induced symmetry breaking and coupling to host states
F Marczinowski1, J Wiebe, J-M Tang
1Institute of Applied Physics, Hamburg University, Jungiusstrasse 11, D-20355 Hamburg, Germany.
Abstract:
We present low-temperature scanning tunneling spectroscopy measurements on Mn acceptors in InAs in comparison with tight-binding calculations. We find a strong (001)-mirror asymmetry of the bound hole wave function close to the (110) surface. In addition, multiple acceptor-related peaks are observed and are attributed to a spin-orbit splitting of the acceptor level. Because of the p-d exchange interaction the local density of states near the acceptors is enhanced in the valence band and suppressed in the conduction band. We also observe signs of anisotropic scattering of the conduction band states by neutral acceptors.
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