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Updated: Jul 10, 2026
Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
Published on: December 7, 2015
Single- and few-walled carbon nanotubes grown at temperatures as low as 450 degrees c: electrical and field emission
A Gohier1, M A Djouadi, M Dubosc
1Institut des Matériaux Jean Rouxel, IMN, Université de Nantes, UMR CNRS 6502, 2 rue de la Houssinière, 44322 Nantes, France.
Abstract:
Single-wall (SW-) and few-walled (FW-) carbon nanotubes (CNTs) were synthesized on aluminum/ cobalt coated silicon at temperatures as low as 450 degrees C by plasma enhanced chemical vapor deposition technique (PECVD). The SWCNTs and FWCNTs grow vertically oriented and well separated from each other. The cold field emission studies of as-grown SWCNTs and FWCNTs showed low turn-on field emission threshold voltages, strongly dependent of the nanotubes morphology. Current-voltage curves of individual CNTs, measured by conductive atomic force microscopy (CAFM), showed an electrical resistance of about 90 Komega, that is attributed mainly to the resistance of the contact between the CNTs and the conductive CAFM tip (Au and Pt).
