Related Experiment Video
Updated: Jul 10, 2026

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
Published on: August 29, 2025
Solution-processed organic field-effect transistors and unipolar inverters using self-assembled interface dipoles on
Cheng Huang1, Howard E Katz, James E West
1Department of Materials Science and Engineering and Department of Electrical and Computer Engineering, G. W. C. Whiting School of Engineering, Johns Hopkins University, Baltimore, Maryland 21218, USA.
Abstract:
Self-assembled monolayers (SAMs) of polarized and nonpolarized organosilane molecules on gate insulators induced tunable threshold voltage shifting and current modulation in organic field-effect transistors (OFETs) made from solution-deposited 5,5'-bis(4-hexylphenyl)-2,2'-bithiophene (6PTTP6), defining depletion-mode and enhancement-mode operation. p-Channel inverters were made from pairs of OFETs with an enhancement-mode driver and a depletion-mode load to implement full-swing and high-gain organic logic circuits. The experimental results indicate that the shift of the transfer characteristics is governed by the built-in electric field of the SAM. The effect of surface functional groups affixed to the dielectric substrate on the grain appearance and film mobility is also determined.
More Related Videos
14:16Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
Published on: October 23, 2018
08:43Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
Published on: November 7, 2016
Related Concept Videos
Field Effect Transistor
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
Bipolar Junction Transistor
The structure...
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Schottky Barrier Diode
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...