Laser emission in highly doped Nd:YAG crystals under (4)F(5/2) and (4)F(3/2) pumping

A comparison of laser emission in highly doped (2.4-and 3.5-at. %) Nd:YAG crystals is made for conventional 808-nm pumping in F(5/2)(4) and resonant pumping at 885 nm in the band that collects the hot transitions Z(2)?R(1) and Z(3)?R(2) of I(9/2)(4)?F(3/2)(4) absorption. A systematic improvement of the laser parameters (slope efficiency and emission threshold) in absorbed power under hot-band pumping is observed, as expected from the reduction of the pump's quantum defect. Together with the expected reduction of heat generation, resonant hot-band pumping in concentrated components shows prospect for greatly increasing the emission capabilities of the Nd:YAG lasers.