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Semiconductors

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...

Biasing of Metal-Semiconductor Junctions

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

Metal-Semiconductor Junctions

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...

Biasing of P-N Junction

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...

Biasing of FET

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the gate...

P-N junction

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

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Related Experiment Video

Updated: Jul 9, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

Gate-induced insulating state in bilayer graphene devices.

Jeroen B Oostinga¹, Hubert B Heersche, Xinglan Liu

¹Kavli Institute of Nanoscience, Delft University of Technology, PO Box 5046, 2600 GA, Delft, The Netherlands.

Nature Materials

|December 7, 2007

Summary

Researchers induced an insulating state in bilayer graphene, a key material for electronics, by applying an electric field. This breakthrough overcomes the challenge of switching off conductivity, paving the way for advanced electronic devices.

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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

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Area of Science:

Materials Science
Condensed Matter Physics
Nanotechnology

Background:

Graphene's high carrier mobility (~10,000 cm2 V(-1) s(-1)) at room temperature makes it promising for integrated electronics.
A major limitation for graphene-based field-effect transistors is the absence of a bandgap, hindering conductivity control.

Purpose of the Study:

To demonstrate the controlled induction of an insulating state in bilayer graphene.
To overcome the challenge of switching off electrical conductivity in graphene for electronic applications.

Main Methods:

Utilized a double-gate device configuration to apply an electric field perpendicular to the graphene plane.
Investigated the dependence of resistance on temperature and electric field.

Main Results:

Successfully induced an insulating state in bilayer graphene, significantly suppressing conductivity.
Observed that the effect was specific to bilayer graphene, with no significant change in single-layer graphene.
The induced insulating state is attributed to the opening of a bandgap.

Conclusions:

Controlled induction of an insulating state in bilayer graphene is achievable using an electric field.
This finding suggests the opening of a bandgap in bilayer graphene, enabling conductivity switching.
The results are crucial for developing graphene-based electronic devices like field-effect transistors.