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Growth and Electrostatic/chemical Properties of Metal/LaAlO3/SrTiO3 Heterostructures
Published on: February 8, 2018
Production and characterization of Ti:sapphire thin films grown by reactive laser ablation with elemental precursors
P R Willmott1, P Manoravi, J R Huber
1Physikalisch-Chemisches Institut der Universität Zürich, Winterthurerstrasse 190, CH-8057 Zürich, Switzerland.
Optics Letters
|December 15, 2007
Abstract:
Crystalline Ti:sapphire (Ti:Al(2)O(3)) thin films were grown at low temperatures upon Al(2)O(3) (0001) substrates by reactive crossed-beam laser ablation at 248 nm by use of a liquid Ti-Al alloy target and O(2) . The films were investigated ex situ by x-ray diffraction, x-ray photoelectron spectroscopy, and Rutherford backscattering spectrometry. Low-temperature luminescence was identical to that for Ti(3+) ions in bulk samples of Al(2)O(3) .
