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Fermi surface map of large-scale single-orientation graphene on SiO2
E Miniussi1, C Bernard, H Y Cun
1Physik-Institut, Universität Zürich, Winterthurerstrasse 190, CH-8057 Zürich, Switzerland.
Journal of Physics. Condensed Matter : an Institute of Physics Journal
|September 27, 2017
Summary
Large-scale graphene transfer using tetraoctylammonium electrochemistry yields high-quality films on iridium. Characterization confirms single-orientation graphene with properties indicating a charge-neutral state.
Area of Science:
- Materials Science
- Surface Science
- Condensed Matter Physics
Background:
- Graphene's unique electronic properties make it promising for advanced applications.
- Scalable and high-quality transfer methods are crucial for practical graphene utilization.
- Growth on single-crystal metal substrates like iridium offers controlled graphene formation.
Purpose of the Study:
- To develop and demonstrate a large-scale electrochemical transfer method for graphene.
- To characterize the quality and orientation of the transferred graphene films.
- To investigate the electronic properties of the transferred graphene.
Main Methods:
- Chemical vapor deposition (CVD) of graphene on single-crystalline Ir(111) films.
- Tetraoctylammonium-assisted electrochemical exfoliation for large-scale transfer.
- Characterization using optical microscopy, Raman spectroscopy, four-point probe measurements, low-energy electron diffraction (LEED), and photoelectron spectroscopy (PES).
Main Results:
- Successful large-scale transfer of graphene films grown on Ir(111).
- Characterization confirmed single-orientation graphene with low sheet resistance and controlled carrier concentration.
- Low-energy electron diffraction and photoelectron spectroscopy indicated high-quality, oriented graphene.
- Angular resolved photoemission spectroscopy revealed a Fermi surface and Dirac point consistent with charge-neutral graphene.
Conclusions:
- Tetraoctylammonium-assisted electrochemical transfer is an effective method for large-scale, high-quality graphene.
- The transferred graphene exhibits properties suitable for electronic device applications.
- The study demonstrates a pathway towards integrating high-quality graphene into technological platforms.
