Related Experiment Video
Updated: Jul 8, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Localization and characterization of simple defects in finite-sized photonic crystals
Jean-Philippe Groby1, Dominique Lesselier
1Centre de Mathématiques Appliquées, UMR7641 CNRS/Ecole Polytechnique, Route de Saclay, Palaiseau F-91128, France. groby@lss.supelec.fr
Abstract:
Structured materials like photonic crystals require for optimal use a high degree of precision with respect to both position and optical characteristics of their components. Here we present a simple tomographic algorithm, based on a specific Green's function together with a first-order Born approximation, which enables us to localize and characterize identical defects in finite-sized photonic crystals. This algorithm is proposed as a first step to the monitoring of such materials. Illustrative numerical results show in particular the possibility of focalization beyond the Rayleigh criterion.
Related Concept Videos
Imperfections in Crystal Structure: Point, Line and Plane Defects
Imperfections in Crystal Structure: Stoichiometric Point Defects
Imperfections in Crystal Structure: Non-Stoichiometric Defects
Lattice Centering and Coordination Number
Types of Unit Cells
Imagine taking a large number of identical...
X-ray Crystallography
Diffraction
Diffraction is the change in the direction of travel experienced by an electromagnetic wave when it encounters a physical barrier whose dimensions are comparable to those of the wavelength of the light. X-rays are electromagnetic radiation with wavelengths about as long as the distance between neighboring...

