Driving-dependent damping of Rabi oscillations in two-level semiconductor systems

D Mogilevtsev1, A P Nisovtsev, S Kilin

  • 1Institute of Physics, NASB, F. Skarina Avenue 68, Minsk, 220072, Belarus.

Physical Review Letters
|February 1, 2008
PubMed
Summary

We explain Rabi oscillation damping in semiconductors using a dephasing reservoir model. Non-Markovian effects and environmental coupling influence dephasing rates and oscillation damping, matching experimental data.

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