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Quantum-Hall activation gaps in graphene.

A J M Giesbers1, U Zeitler, M I Katsnelson

  • 1High Field Magnet Laboratory, Institute for Molecules and Materials, Radboud University Nijmegen, Toernooiveld 7, 6525 ED Nijmegen, The Netherlands. J.Giesbers@science.ru.nl

Physical Review Letters
|February 1, 2008
PubMed
Summary

We studied quantum Hall gaps in graphene, finding the nu=6 gap fits broadened Landau levels. The nu=2 gap shows surprising temperature and field dependence, explained by Landau level narrowing.

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Quantum Mechanics

Background:

  • Graphene exhibits unique electronic properties, including the quantum Hall effect.
  • Understanding energy gaps in graphene is crucial for electronic device applications.

Purpose of the Study:

  • To investigate quantum Hall activation gaps in graphene at specific filling factors.
  • To analyze the temperature and magnetic field dependence of these gaps.

Main Methods:

  • Measurements of quantum Hall activation gaps in graphene.
  • Utilized magnetic fields up to 32 Tesla.
  • Conducted experiments across a temperature range of 4 to 300 Kelvin.

Main Results:

  • The gap at filling factor nu=6 is consistent with thermal excitation to broadened Landau levels (width ~400 K).
  • The gap at filling factor nu=2 exhibits strong temperature and field dependence.
  • At high fields (B>20 T) and temperatures (T>100 K), the nu=2 gap approaches values expected for sharp Landau levels.

Conclusions:

  • The observed behavior at nu=2 suggests a narrowing of the lowest Landau level.
  • These findings offer insights into the complex electronic behavior of graphene under extreme conditions.