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Cooling Rate Dependent Ellipsometry Measurements to Determine the Dynamics of Thin Glassy Films
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Published on: January 26, 2016

Relaxation dynamics in quantum electron glasses.

Z Ovadyahu1

  • 1Racah Institute of Physics, The Hebrew University, Jerusalem 91904, Israel.

Physical Review Letters
|February 1, 2008
PubMed
Summary
This summary is machine-generated.

Electron glass dynamics depend on carrier concentration, showing temperature-dependent or independent behavior. This suggests a model for dissipative tunneling, explaining electron-glass effects in granular metals but not semiconductors.

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Area of Science:

  • Condensed matter physics
  • Quantum mechanics
  • Materials science

Background:

  • Electron glasses exhibit complex dynamics influenced by system parameters.
  • Understanding relaxation times and their dependence on temperature and carrier concentration is crucial.

Purpose of the Study:

  • To investigate the temperature and carrier concentration dependence of electron glass dynamics.
  • To correlate relaxation time (viscosity) with system properties.
  • To evaluate the applicability of the dissipative tunneling model to electron glasses.

Main Methods:

  • Experimental measurements of electron glass dynamics.
  • Analysis of relaxation times and their dependence on temperature and carrier concentration.
  • Comparison of experimental findings with theoretical models, specifically dissipative tunneling.

Main Results:

  • Electron glass dynamics show a dual behavior: slowing down with increasing temperature or remaining independent.
  • A clear correlation exists between typical relaxation time (viscosity) and carrier concentration.
  • These findings are consistent with the dissipative tunneling model.

Conclusions:

  • Slow relaxation in electron glasses can be interpreted as friction in a many-body quantum system.
  • The dissipative tunneling model provides a unifying explanation for observed electron glass phenomena.
  • The study differentiates the likelihood of electron-glass effects in granular metals versus semiconductors.