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Cryogenic microwave amplifiers for precision measurements.

E N Ivanov¹, J G Hartnett, M E Tobar

¹Dept. of Phys., Western Australia Univ., Nedlands, WA, Australia.

IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control

|February 2, 2008

Summary

Noise performance of cryogenic High Electron Mobility Transistor (HEMT) amplifiers was investigated. Results show effective noise temperatures near 6 K, even at low input power levels below -70 dBm.

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Area of Science:

Cryogenic Engineering
Solid-State Electronics
Radio Astronomy Instrumentation

Background:

Low-noise amplifiers are critical for sensitive measurements in radio astronomy and other scientific fields.
High Electron Mobility Transistor (HEMT) technology offers excellent performance at cryogenic temperatures.
Understanding noise performance at various operating points is essential for instrument design.

Purpose of the Study:

To evaluate the noise performance of two specific cryogenic HEMT amplifiers.
To determine the effective noise temperature of these amplifiers under varying power conditions.
To identify the power threshold at which noise performance deviates from ideal cryogenic behavior.

Main Methods:

Experimental characterization of two cryogenic HEMT amplifiers.

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Measurement of effective noise temperature across a range of input power levels.

Analysis of noise performance relative to thermodynamic temperature.

Main Results:

The effective noise temperature for both cryogenic HEMT amplifiers was found to be close to the thermodynamic temperature of 6 K.
This low noise performance was maintained up to a power threshold of approximately -70 dBm.
Deviations from the ideal noise temperature were observed beyond this power threshold.

Conclusions:

Cryogenic HEMT amplifiers exhibit excellent low-noise characteristics near the thermodynamic limit.
The identified power threshold of -70 dBm is a key parameter for utilizing these amplifiers optimally.
These findings are relevant for the design of sensitive cryogenic receivers in scientific applications.