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Passively mode-locked Nd:LuVO(4) laser with a GaAs wafer
Haohai Yu1, Huaijin Zhang, Zhengping Wang
1State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan, China.
Optics Letters
|February 5, 2008
Summary
We achieved high-power continuous-wave mode locking using a diode-pumped Neodymium-doped Lutetium Vanadate (Nd:LuVO4) laser and a Gallium Arsenide (GaAs) wafer. This demonstrates Nd:LuVO4
Area of Science:
- Laser Physics
- Materials Science
Background:
- Diode-pumped solid-state lasers are crucial for various applications.
- Achieving high-power, continuous-wave (CW) mode-locked lasers requires efficient gain media and output coupling.
Purpose of the Study:
- To investigate the passive mode locking of a diode-pumped Nd:LuVO4 laser.
- To evaluate the performance of a Gallium Arsenide (GaAs) wafer as an output coupler in this laser system.
Main Methods:
- Utilized a diode-pumped Nd:LuVO4 laser.
- Employed a Gallium Arsenide (GaAs) wafer as the output coupler, leveraging its interference modulation effect.
- Performed passive mode locking to achieve continuous-wave operation.
Main Results:
- Successfully achieved passive mode locking in the diode-pumped Nd:LuVO4 laser.
- Generated continuous-wave mode-locked pulses with a pulse width of approximately 7.1 picoseconds.
- Obtained an average output power of 3.11 Watts.
Conclusions:
- Nd:LuVO4 is a highly effective gain medium for diode-pumped lasers.
- The GaAs wafer serves as a viable output coupler for high-power mode-locked lasers.
- This work highlights the potential of Nd:LuVO4 for generating high-power ultrashort pulses.

