A theoretical study of AmOn and CmOn (n = 1, 2)

Attila Kovács1, Rudy J M Konings, Juraj Raab

  • 1Materials Structure and Modeling Research Group of the Hungarian Academy of Sciences, Budapest University of Technology and Economics, H-1111, Budapest, Szt. Gellért tér 4, Hungary. akovacs@mail.bme.hu

Summary

Quantum chemical methods accurately predict properties of americium and curium oxides. Calculated dissociation and ionization energies closely match experimental values for AmO and CmO.

Related Concept Videos

MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
Small-Signal Analysis of MOSFET Amplifiers01:23

Small-Signal Analysis of MOSFET Amplifiers

In small-signal analysis, a MOSFET transistor amplifier acts as a linear amplifier when operating in its saturation region. The gate-to-source voltage (VGS) of the MOSFET is the sum of the DC biasing voltage and the small time-varying input signal. This combination sets up the operating point and modulates the drain current (ID) that flows from the drain to the source. When a small AC signal is superimposed on the DC bias voltage at the gate, the instantaneous drain current comprises three...
Characteristics of MOSFET01:17

Characteristics of MOSFET

Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable quicker...
Norton Equivalent Circuits01:16

Norton Equivalent Circuits

Norton's theorem is a fundamental concept in the field of electrical engineering that allows for the simplification of complex AC circuits. The theorem states that any two-terminal linear network can be replaced with an equivalent circuit that consists of an impedance, which is parallel with a constant current source. Figure 1 shows the AC circuit portioned into two parts: Circuit A and Circuit B, while Figure 2 depicts the circuit obtained by replacing Circuit A by its Norton equivalent...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
Norton's Theorem01:14

Norton's Theorem

Norton's theorem is a fundamental principle stating that a linear two-terminal circuit can be substituted with an equivalent circuit, which comprises a current source (ⅠN) in parallel with a resistor (RN). Here, ⅠN represents the short-circuit current flowing through the terminals, and RN stands for the input or equivalent resistance at the terminals when all independent sources are deactivated. This implies that the circuit illustrated in Figure (a) can be exchanged with the one depicted in...