Nonlinearity measurements of silicon photodetectors

Nonlinearities of the responsivity of various types of siliconphotodetectors have been studied. These detectors are based onphotodiodes with two sizes of the active area (10 x 10 mm(2) and 18 x 18 mm(2)). The detectorconfigurations investigated include single photodiodes, two reflectiontrap detectors, and a transmission trap detector. For all devices, the measured nonlinearity was less than 2 x 10(-4) forphotocurrents up to 200 muA. The diameter of themeasurement beam was found to have an effect on thenonlinearity. The measured nonlinearity of the trap detectorsdepends on the polarization state of the incident beam. Theresponsivity of the photodetectors consisting of the large-areaphotodiodes reached saturation at higher photocurrent values comparedwith the devices based on the photodiodes with smaller activearea.