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Frequency stabilization of a GaAIAs semiconductor laser by voltage control
Applied Optics
|August 21, 2010
Summary
This study stabilizes a single-mode Gallium Aluminum Arsenide (GaAlAs) laser frequency by maintaining constant injection current and voltage. Achieved long-term frequency stability was 7 x 10(-8), with reproducibility at 3 x 10(-7).
Area of Science:
- Optics and Photonics
- Semiconductor Lasers
Background:
- Frequency stabilization of lasers is crucial for precision measurements and advanced applications.
- Gallium Aluminum Arsenide (GaAlAs) lasers offer specific wavelength properties suitable for various optical systems.
Purpose of the Study:
- To achieve high frequency stability and reproducibility in a single-mode GaAlAs laser.
- To demonstrate a practical method for laser frequency stabilization using basic electrical control parameters.
Main Methods:
- Utilized a single-mode GaAlAs laser.
- Implemented frequency stabilization by precisely controlling the injection current.
- Maintained constant voltage across the laser diode.
Main Results:
- Attained a long-term frequency stability of 7 x 10(-8).
- Demonstrated a reproducibility of 3 x 10(-7) for the laser frequency.
- The method proved effective for stabilizing the laser output.
Conclusions:
- Constant injection current and voltage are effective parameters for stabilizing GaAlAs laser frequency.
- The achieved stability and reproducibility meet requirements for many high-precision applications.
- This technique offers a straightforward approach to enhancing laser performance.
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