Temperature dependence of dielectric permittivity of perovskite-type artificial superlattices

Perovskite-type BaTiO(3)/SrTiO(3) (BTO/STO) artificial superlattices were fabricated by the molecular beam epitaxy method. The X-Ray diffraction (XRD) profiles and reflection, high-energy, electron diffraction (RHEED) oscillations during the growth of superlattices indicated that crystalline orientation toward [001] direction and two-dimensional layer-by-layer growth were achieved. The capacitance, dielectric loss tangent, and complex admittance were measured up to 145 degrees C and up to the frequency of 100 MHz with the microplaner interdigital electrodes. Dielectric permittivity of superlattices was evaluated from the complex admittance with an electromagnetic field analysis as a function of temperature. The [BTO(10)/STO(10)](4) superlattice showed the enormous relative permittivity of 19,000 at room temperature and the dielectric relaxation was observed. The linear relations in the charge versus voltage curves were observed in these superlattices, and the shape of Q-V curves were not changed as a function of temperature. Temperature dependence of dielectric properties of the BTO/STO superlattices was evaluated. It was found that the BTO/STO superlattices did not show a peak in the dielectric permittivity versus temperature curve, which was different from the behavior of BTO-STO bulk ceramics and normal thin films. These results strongly supported that the high permittivity of the superlattices was caused by temperature-stable anisotropic strains induced in the superlattices.