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Linear electrooptic coefficient of InP nanowires.
Clint J Novotny1, Christopher T Derose, Robert A Norwood
1Department of Electrical and Computer Engineering, University of California-San Diego, La Jolla, CA 92093, USA.
Nano Letters
|March 4, 2008
Summary
Researchers developed a new method to measure the electrooptic effect in indium phosphide (InP) nanowires. These nanowires show significantly enhanced electrooptic properties, making them promising for advanced photonic devices.
Area of Science:
- Materials Science
- Optoelectronics
- Nanotechnology
Background:
- Semiconducting nanowires are promising for optoelectronic applications.
- Direct measurement of electrooptic coefficients in nanowires is challenging.
- Existing materials like lithium niobate have limitations in certain applications.
Purpose of the Study:
- To develop a novel fabrication procedure for direct measurement of the linear electrooptic coefficient in semiconducting nanowires.
- To assess the potential of indium phosphide (InP) nanowires for use in electrooptic devices.
- To quantify the enhancement of electrooptic properties in InP nanowires compared to bulk materials.
Main Methods:
- A new fabrication procedure was developed for direct measurement.
- Vertically aligned InP nanowires were transferred to a glass substrate using a host polymer, preserving alignment.
- The linear electrooptic coefficient and figure of merit (n^3r) were measured.
Main Results:
- The linear electrooptic coefficient of InP nanowires was enhanced by 1-2 orders of magnitude compared to bulk InP.
- Measured coefficients ranged from 31 to 147 pm/V.
- The figure of merit (n^3r) showed a 20-fold enhancement over lithium niobate, ranging from 1010 to 4817 pm/V.
Conclusions:
- The developed fabrication procedure enables direct measurement of electrooptic coefficients in aligned nanowires.
- InP nanowires exhibit significantly enhanced linear electrooptic properties, surpassing bulk InP and lithium niobate.
- These findings highlight the potential of InP nanowires for next-generation electrooptic devices.
