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Side extraction duoPIGatron-type ion source.

V I Gushenets1, E M Oks, Ady Hershcovitch

  • 1High Current Electronics Institute, Russian Academy of Sciences, Tomsk, Russia.

The Review of Scientific Instruments
|March 5, 2008
PubMed
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A novel compact duoPIGatron ion source with side extraction was developed for ion implanters. This new design demonstrates stable arc, dense plasma, and significant beam currents for industrial applications.

Area of Science:

  • Plasma physics
  • Ion source technology
  • Materials science

Background:

  • Conventional duoPIGatron sources use axial ion extraction.
  • Industrial ion sources require compact and efficient designs.
  • Understanding plasma characteristics is crucial for ion source performance.

Purpose of the Study:

  • To design and construct a compact duoPIGatron ion source with side extraction.
  • To investigate the physical and technological aspects of this novel ion source.
  • To evaluate its operating parameters for potential industrial use.

Main Methods:

  • Development of a compact duoPIGatron ion source with a 1 x 40 mm(2) side extraction aperture.
  • Operation with argon (Ar) and boron trifluoride (BF3) gases.

Related Experiment Videos

  • Measurement of total unanalyzed beam currents at varying arc currents.

    • Main Results:

    • The side extraction duoPIGatron exhibited a stable arc, uniform illumination, and dense plasma.
    • Achieved 40 mA beam current with Ar at 7 A arc current.
    • Achieved 13 mA beam current with BF3 at 9 A arc current.

    Conclusions:

    • The compact side extraction duoPIGatron is a viable design for ion implantation.
    • The source demonstrates promising stable plasma and beam characteristics.
    • Further studies can optimize parameters for specific industrial applications.