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Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

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Elastic laser light scattering by GaAs surfaces.

V A Sterligov¹, Y V Subbota, Y M Shirshov

¹Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospect Nauki 45, 252650 Kiev 28, Ukraine. sterl@mail.kar.net

|March 6, 2008

Summary

Angle-resolved scattering (ARS) reveals regular surface microrelief on GaAs crystals. This technique can characterize surface topography and crystal defects using different laser wavelengths.

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Area of Science:

Materials Science
Solid State Physics
Surface Science

Background:

Gallium Arsenide (GaAs) is a crucial semiconductor material.
Understanding GaAs surface properties is vital for device fabrication.
Surface microrelief can impact electronic and optical properties.

Purpose of the Study:

To investigate the surface microrelief of GaAs single crystals.
To characterize the statistical properties of the surface microrelief.
To propose a method for determining topographical properties and crystal defects.

Main Methods:

Angle-resolved scattering (ARS) intensity measurements in the backscattering hemisphere.
Analysis of (1 0 0) and (1 1 1) faces of GaAs single crystals.
Laser elastic light scattering to detect surface microrelief.

Main Results:

A regular surface microrelief was observed on GaAs crystals.
The microrelief orientation correlates with crystallographic axes.
Statistical properties of the microrelief were determined.

Conclusions:

ARS is effective in revealing surface microrelief on GaAs.
The ARS ratio at different wavelengths can quantify surface topography.
This method aids in the study of crystal surface defects.