Related Experiment Video
Updated: Mar 26, 2026

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
Published on: October 23, 2018
Dispersion of Phonon Surface Polaritons in ZnGeP2: Anisotropy and Temperature Impacts
K V Shportko1, A Otto2, E F Venger3
1Department of Semiconductor Heterostructures, V.E. Lashkarev Institute for Semiconductor Physics of NAS of Ukraine, 45 Nauki av., Kyiv, 03028, Ukraine. Konstantin@shportko.com.
Abstract:
Zinc germanium diphosphide (ZnGeP2) is an attractive and promising functional material for different devices of the nano- and optoelectronics. In this paper, dispersion of phonon surface polaritons (PSPs) in ZnGeP2 has been studied in the 200-500-cm(-1) spectral range at 4 and 300 K. Dispersion of "real" and "virtual" PSPs were calculated for C-axis being normal and parallel to the surface. Anisotropy in ZnGeP2 leads to the different numbers of PSP dispersion branches for different orientations of the sample. The temperature-dependent phonon contributions in the dielectric permittivity shift dispersion of the surface polaritons in ZnGeP2 to the higher wavenumbers at 4 K. We have shown that experimental dispersion of PSP is in agreement with theory.
More Related Videos
Related Concept Videos
Imperfections in Crystal Structure: Stoichiometric Point Defects
Potential Due to a Polarized Object

