Annealing behavior of barriers in ion-implanted LiNbO3 and LiTaO3 planar waveguides

We formed planar waveguides in LiNbO(3) and LiTaO(3) crystals by megaelectron volt He-ion implantation. The dark modes of both waveguides are measured and their refractive-index profiles are described according to the parameterized index profile reconstruction method. The extraordinary indices of both ion-implanted waveguides exhibit quite different profiles. We compare the thermal stability of barriers in ion-implanted LiNbO(3) and LiTaO(3) waveguides by annealing at different temperatures. The results show that the barrier in a LiTaO(3) planar waveguide has higher thermal stability than that in a LiNbO(3) waveguide. The experiments also show that annealing at a temperature higher than 400 degrees C results in recrystallization of the barrier.