Deposition at low substrate temperatures of high-quality TiO2 films by radical beam-assisted evaporation

We deposited high-quality TiO2 films by an oxygen-radical beam-assisted evaporation (RBE) method at a lower substrate temperature (Ts) than that for a TiO2 film deposited by conventional thermal evaporation (TE) with neutral-oxygen gas. The films were then evaluated in terms of refractive index, shift of wavelength of a peak in the reflection curve, and absorption coefficient. The TiO2 films deposited by RBE at Ts < 473 K showed higher refractive indices, were more compact, and had lower absorption coefficients than the film deposited by TE at Ts = 473 K.