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P-N junction

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

Biasing of P-N Junction

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...

Biasing of Metal-Semiconductor Junctions

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

Biasing of FET

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Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
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Thermal expansion and Thermal stress: Problem Solving

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San Francisco's Golden Gate Bridge is exposed to temperatures ranging from -15 °C to 40 °C. At its coldest, the main span of the bridge is 1275 m long. Assuming that the bridge is made entirely of steel, what is the change in its length between these temperatures?
To solve the problem, first, identify the known and unknown quantities. The initial length (L) of the bridge is 1275 m, the coefficient of linear expansion (α) for steel is 12 x 10-6/°C, and the change in temperature (ΔT) is 55 °C.

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Linear Approximation in Frequency Domain

Linear systems are characterized by two main properties: superposition and homogeneity. Superposition allows the response to multiple inputs to be the sum of the responses to each individual input. Homogeneity ensures that scaling an input by a scalar results in the response being scaled by the same scalar.
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Related Experiment Video

Updated: Jul 6, 2026

Temperature-Controlled Assembly and Characterization of a Droplet Interface Bilayer

Temperature-Controlled Assembly and Characterization of a Droplet Interface Bilayer

Published on: April 19, 2021

Nonlinear thermal control in an N-terminal junction.

¹Chemical Physics Theory Group, Department of Chemistry, University of Toronto. Toronto, ON, Canada.

Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics

|March 21, 2008

Summary

Researchers controlled heat flow in molecular junctions by tuning external gate reservoirs. Anharmonic interactions are key for controlling heat current, unlike purely harmonic systems.

Area of Science:

Molecular electronics
Quantum thermodynamics
Nanoscale heat transfer

Background:

Controlling heat flow at the molecular level is crucial for developing advanced thermal management devices.
Understanding the role of molecular vibrations and anharmonicity in thermal transport is an ongoing challenge.

Purpose of the Study:

To demonstrate tunable heat flow control in a molecular junction.
To investigate the influence of external gating reservoirs on thermal transport.
To compare the thermal transport properties of harmonic and anharmonic molecular models.

Main Methods:

Utilizing simple model Hamiltonians to simulate heat flow in a molecular junction.
Analyzing two models: a fully harmonic system and a system with anharmonic interactions.

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Last Updated: Jul 6, 2026

Temperature-Controlled Assembly and Characterization of a Droplet Interface Bilayer

Temperature-Controlled Assembly and Characterization of a Droplet Interface Bilayer

Published on: April 19, 2021

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

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Investigating the effect of temperature and coupling parameters of external gating reservoirs.

Main Results:

External gating reservoirs can tune the heat current through the molecular junction.
A fully harmonic model showed no controllability over heat flow.
An anharmonic system exhibited strong dependence of conduction properties on gate parameters, enabling heat flow control.

Conclusions:

Heat flow in molecular junctions can be effectively controlled by external gates, particularly in systems with anharmonic interactions.
Anharmonicity is essential for achieving tunable thermal transport at the molecular scale.
The findings suggest potential applications in nanodevices and molecular machines for thermal management.