Related Experiment Video
Updated: Jul 6, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Electronic compressibility of a graphene bilayer
S Viola Kusminskiy1, Johan Nilsson, D K Campbell
1Department of Physics, Boston University, 590 Commonwealth Ave., Boston, Massachusetts 02215, USA.
Abstract:
We calculate the electronic compressibility arising from electron-electron interactions for a graphene bilayer within the Hartree-Fock approximation. We show that, due to the chiral nature of the particles in this system, the compressibility is rather different from those of either the two-dimensional electron gas or ordinary semiconductors. We find that an inherent competition between the contributions coming from intraband exchange interactions (dominant at low densities) and interband interactions (dominant at moderate densities) leads to a nonmonotonic behavior of the compressibility as a function of carrier density.
Related Concept Videos
Fermi Level Dynamics
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
Electrostatic Boundary Conditions in Dielectrics
Consider a case where both the mediums across a boundary are two different dielectric materials. Recall that the electric field and electric displacement are proportional and related through the material's permittivity.
The Electrical Double Layer
Comparison Between Electrical And Gravitational Forces
Since both are inverse square law forces, the distance gets canceled when the ratio of the two forces is considered. Instead, the ratio of the electrical and gravitational forces depends on...
The Van der Waals Equation
Debye–Huckel–Onsager Conductance Equation

