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Updated: Jul 6, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Alessandro Romito1, Yuval Gefen, Yaroslav M Blanter
1Department of Condensed Matter Physics, The Weizmann Institute of Science, Rehovot 76100, Israel.
This study details a protocol for measuring electron spin weak values in solid-state devices using a double quantum dot and quantum point contact detector. It predicts anomalously large and negative spin values, accounting for decoherence effects.
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