Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Experiment Video

Updated: Jul 6, 2026

Hybrid Microdrive System with Recoverable Opto-Silicon Probe and Tetrode for Dual-Site High Density Recording in Freely Moving Mice
08:57

Hybrid Microdrive System with Recoverable Opto-Silicon Probe and Tetrode for Dual-Site High Density Recording in Freely Moving Mice

Published on: August 10, 2019

High-Density Er-Implanted GaN Optical Memory Devices.

B K Lee, R C Chi, D L Chao

    Applied Optics
    |March 25, 2008
    PubMed
    Summary
    This summary is machine-generated.

    Related Concept Videos

    You might also read

    Related Articles

    Articles linked to this work by shared authors, journal, and citation graph.

    Sort by
    Same author

    Correction to: A Composite Measure of Gambling Exposure: Availability, Accessibility or Both?

    Journal of gambling studies·2021
    Same author

    Correction to: The Relative and Interactive Effects of Actual and Perceived Gambling Exposure on Gambling Behaviour.

    Journal of gambling studies·2021
    Same author

    The Relative and Interactive Effects of Actual and Perceived Gambling Exposure on Gambling Behaviour.

    Journal of gambling studies·2021
    Same author

    A Composite Measure of Gambling Exposure: Availability, Accessibility or Both?

    Journal of gambling studies·2020
    Same author

    Gold Standard Cholera Diagnostics Are Tarnished by Lytic Bacteriophage and Antibiotics.

    Journal of clinical microbiology·2020
    Same author

    Performance of the simplified acute physiology score III in acute organophosphate poisoning: A retrospective observational study.

    Human & experimental toxicology·2017
    Same journal

    Multifunctional reconfigurable terahertz metasurface based on vanadium dioxide phase transition: achieving broadband absorption and efficient polarization conversion.

    Applied optics·2026
    Same journal

    High-Q-factor electromagnetically induced transparency utilizing quasi-bound states in the continuum in an all-dielectric terahertz metasurface.

    Applied optics·2026
    Same journal

    Automated stitching interferometry for high-precision metrology of X-ray mirrors.

    Applied optics·2026
    Same journal

    Experimental demonstration of an approach to designing a metal-dielectric DBR resonant cavity structure.

    Applied optics·2026
    Same journal

    High-precision wavefront reconstruction from a single-shot interferogram using a physics-driven hybrid feature calibration network.

    Applied optics·2026
    Same journal

    Ultra-high-Q Fano resonance based on coupled topological corner states in Kagome photonic crystals.

    Applied optics·2026
    See all related articles

    Researchers demonstrated data storage in erbium-implanted gallium nitride (GaN) using focused ion beam (FIB) technology. This novel approach utilizes upconversion emission for reading information, paving the way for high-density optical memory.

    Area of Science:

    • Materials Science
    • Optoelectronics
    • Data Storage

    Background:

    • Upconversion emission in rare-earth-doped materials enables the conversion of lower-energy photons to higher-energy ones.
    • Gallium nitride (GaN) is a semiconductor material with potential for optoelectronic applications.
    • Focused Ion Beam (FIB) implantation allows for precise patterning at the nanoscale.

    Purpose of the Study:

    • To demonstrate data storage capabilities in erbium (Er)-implanted GaN using FIB technology.
    • To investigate the feasibility of using photon upconversion for reading stored data.
    • To explore the potential for high-density 3D optical memory.

    Main Methods:

    • Erbium ions were implanted into GaN using a focused ion beam (FIB) to create specific patterns.

    More Related Videos

    Implantation of Optoelectronic Devices in the Rodent Spinal Cord
    04:35

    Implantation of Optoelectronic Devices in the Rodent Spinal Cord

    Published on: July 12, 2024

    Gradient Echo Quantum Memory in Warm Atomic Vapor
    10:00

    Gradient Echo Quantum Memory in Warm Atomic Vapor

    Published on: November 11, 2013

    Related Experiment Videos

    Last Updated: Jul 6, 2026

    Hybrid Microdrive System with Recoverable Opto-Silicon Probe and Tetrode for Dual-Site High Density Recording in Freely Moving Mice
    08:57

    Hybrid Microdrive System with Recoverable Opto-Silicon Probe and Tetrode for Dual-Site High Density Recording in Freely Moving Mice

    Published on: August 10, 2019

    Implantation of Optoelectronic Devices in the Rodent Spinal Cord
    04:35

    Implantation of Optoelectronic Devices in the Rodent Spinal Cord

    Published on: July 12, 2024

    Gradient Echo Quantum Memory in Warm Atomic Vapor
    10:00

    Gradient Echo Quantum Memory in Warm Atomic Vapor

    Published on: November 11, 2013

  • Visible green emission (522- and 546-nm) was excited using infrared (IR) lasers (840 nm and 1000 nm).
  • Data was encoded as patterns of implanted (logic 1) and unimplanted (logic 0) locations, and read via upconversion emission.

    • Main Results:

    • Visible upconversion emission was successfully obtained from Er-implanted GaN.
    • Data bits were stored and read using patterns as small as 0.5 micrometers.
    • Integrated upconversion emission power reached approximately 40 pW under dual-laser excitation.

    Conclusions:

    • Focused ion beam (FIB) implantation of erbium into GaN enables optical data storage.
    • Photon upconversion provides a mechanism for reading stored information in this system.
    • Rare-earth-doped semiconductors offer a promising route towards ultra-high-density 3D optical memory, potentially reaching 10^12 bits/cm^3.