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Preparation of Polyoxometalate-based Photo-responsive Membranes for the Photo-activation of Manganese Oxide Catalysts
Published on: August 7, 2018
GaN membrane metal-semiconductor-metal ultraviolet photodetector
A Müller1, G Konstantinidis, M Dragoman
1IMT-Bucharest, Bucharest, Romania.
Abstract:
GaN is a wide-bandgap semiconductor with still unexplored capabilities for ultraviolet detection. To exploit GaN properties better for ultraviolet detection, a metal-semiconductor-metal-type photodetector structure was designed and manufactured on a 2.2 microm thin GaN membrane fabricated by micromachining techniques. As a result, a very low dark current (30 pA at 3 V) and a maximum responsivity of 14 mA/W at a wavelength of 370 nm were obtained.
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