Four point bending setup for characterization of semiconductor piezoresistance
J Richter1, M B Arnoldus, O Hansen
1Department of Micro- and Nanotechnology, Technical University of Denmark, DTU Nanotech Building 345 East, DK-2800 Kongens Lyngby, Denmark. jar@mic.dtu.dk
The Review of Scientific Instruments
|May 2, 2008
Summary
We developed a compact, high-precision setup for characterizing semiconductor piezoresistance. This system accurately measures the piezocoefficient in silicon across various temperatures and doping levels.
Area of Science:
- Materials Science
- Solid State Physics
- Electrical Engineering
Background:
- Piezoresistance in semiconductors is crucial for sensor applications.
- Accurate characterization requires precise control over applied stress and temperature.
- Existing methods may lack the required precision or temperature control.
Purpose of the Study:
- To present a novel, compact four-point bending setup for high-precision piezoresistance characterization.
- To validate the setup's performance through finite element modeling and experimental measurements.
- To quantify the piezocoefficient in p-type silicon under controlled conditions.
Main Methods:
- A compact (635 cm³) four-point bending fixture made of PEEK, housed in thermally controlled aluminum.
- Actuation via a microstepper and force measurement using a high-sensitivity sensor.
- Characterization of p-type silicon piezoresistance (pi(44)) from 30°C to 80°C at varying doping levels.
Main Results:
- Demonstrated high-precision characterization of piezoresistance in p-type silicon.
- Achieved an uncertainty of 1.8% in extracted piezocoefficient measurements.
- Validated the setup's capability to perform measurements across different temperatures and doping concentrations.
Conclusions:
- The presented four-point bending setup enables accurate and reliable piezoresistance characterization in semiconductors.
- The system's compact design and thermal control offer significant advantages for material analysis.
- The methodology provides a robust platform for investigating semiconductor piezoresistive properties.
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