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Related Experiment Video

Updated: May 11, 2026

A Method for Growing Bio-memristors from Slime Mold
07:46

A Method for Growing Bio-memristors from Slime Mold

Published on: November 2, 2017

The missing memristor found.

Dmitri B Strukov1, Gregory S Snider, Duncan R Stewart

  • 1HP Labs, 1501 Page Mill Road, Palo Alto, California 94304, USA.

Nature
|May 3, 2008
PubMed
Summary
This summary is machine-generated.

Researchers have identified a physical model for the memristor (memory resistor), a theorized fourth fundamental circuit element. This discovery explains hysteretic behavior in nanoscale devices, particularly titanium dioxide switches.

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Last Updated: May 11, 2026

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09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

Area of Science:

  • Solid-state physics
  • Nanoscale electronics
  • Circuit theory

Background:

  • The resistor, capacitor, and inductor are fundamental passive circuit elements.
  • Leon Chua theorized the memristor (memory resistor) in 1971 based on symmetry arguments.
  • A practical physical model and example of a memristor have been lacking until now.

Purpose of the Study:

  • To present a useful physical model for the memristor.
  • To demonstrate how memristance arises in nanoscale systems.
  • To provide a foundation for understanding hysteretic behavior in electronic devices.

Main Methods:

  • Utilizing a simple analytical example.
  • Investigating coupled solid-state electronic and ionic transport.
  • Applying an external bias voltage to nanoscale systems.

Main Results:

  • Memristance naturally emerges in nanoscale systems with coupled electronic and ionic transport.
  • A physical basis for the memristor has been established.
  • The findings explain hysteretic current-voltage behavior in various nanoscale devices.

Conclusions:

  • The memristor is a physically realizable circuit element.
  • This work provides a foundational understanding of memristor behavior.
  • The results are applicable to nanoscale electronic devices, including titanium dioxide cross-point switches.