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Updated: Jul 5, 2026
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Published on: December 4, 2014
Growth and characterization of titanium silicate nanofilms for gate oxide applications
Seungjae Lee1, Jaehyun Kim, Kijung Yong
1Electrical and Computer Engineering Division, Department of Chemical Engineering, Pohang University of Science and Technology, San 31, Hyoja-dong, Nam-gu, Pohang, Kyunbuk 790-784, Korea.
Abstract:
Atomic layer chemical vapor deposition (ALCVD) of titanium silicate nanofilms using a precursor combination of tetrakis-diethylamido-titanium (Ti(N(C2H5)2)4) and tetra-n-butyl-orthosilicate (Si(O(n)Bu)4) was studied for high dielectric gate oxides. ALCVD temperature window in our study was 170-210 degrees C with a growth rate of 0.8 A/cycle. We investigated the effects of deposition conditions, such as deposition temperature, pulse time of precursor and purge injection, on the titanium silicate nanofilm growth. The saturated composition of Ti/(Ti+ Si) ratio was 0.6 and impurity concentrations were less than 1 atomic %. Dielectric constant (k) of the as-deposited titanium silicate film was approximately 10.5. Hysteresis in capacitance-voltage (C-V) measurements was less than 0.35 V before and after annealing. The leakage current density of the as-deposited and 400 degrees C annealed film was 1.4 x 10(-4) A/cm2, 4.2 x 10(-4) A/cm2, respectively, at a bias of -1 V.
