GaN, ZnO and InN nanowires and devices
S J Pearton1, B S Kang, B P Gila
1Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611-6400, USA.
Journal of Nanoscience and Nanotechnology
|May 13, 2008
Abstract:
A brief review is given of recent developments in wide bandgap semiconductor nanowire synthesis and devices fabricated on these nanostructures. There is strong interest in these devices for applications in UV detection, gas sensors and transparent electronics.
