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Published on: May 24, 2020
Vapor phase self-assembly of molecular gate dielectrics for thin film transistors
Sara A DiBenedetto1, David Frattarelli, Mark A Ratner
1Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, USA.
Journal of the American Chemical Society
|May 24, 2008
Abstract:
Organic-inorganic films grown entirely via a vapor-phase deposition process and composed of highly polarizable molecular structures are investigated as gate dielectrics in organic field-effect transistors (OFETs). Molecules 1 and 2 form self-ordered thin films via hydrogen bonding, and these organic-inorganic structures exhibit large capacitances and large pentacene OFET mobilities.
