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Electrical contacts to individual colloidal semiconductor nanorods.

Paul-Emile Trudeau¹, Matt Sheldon, Virginia Altoe

¹Department of Chemistry, University of California, Berkeley, Berkeley, California 94720, USA.

|May 29, 2008

Summary

Charge transport in cadmium telluride (CdTe) nanocrystals is affected by electrode interactions. A protective silicon dioxide (SiO2) layer prevents these reactions, maintaining optimal electrical properties.

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Area of Science:

Materials Science
Nanotechnology
Solid State Physics

Background:

Single nanocrystal devices are crucial for understanding fundamental charge transport properties.
Electrical contact methods can influence the intrinsic properties of nanomaterials.
Cadmium telluride (CdTe) nanocrystals are promising for electronic applications.

Purpose of the Study:

To investigate the impact of metal electrodes on the charge transport characteristics of single CdTe nanocrystals.
To understand the role of interface chemistry in device performance.
To explore methods for mitigating interface-induced effects.

Main Methods:

Fabrication of single-nanocrystal devices using evaporated Palladium (Pd) electrodes.
Electrical measurements of device charging energy (E c) as a function of electrode separation.

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Surface analysis using ensemble X-ray photoelectron spectroscopy (XPS).

In-situ characterization using transmission electron microscopy (TEM) and energy-dispersive X-rays (EDX).

Main Results:

A sudden drop in charging energy (E c) was observed below electrode separations of approximately 55 nm.
This drop was attributed to chemical reactions at the CdTe nanocrystal-electrode interface.
XPS, TEM, and EDX studies corroborated the presence of interface reactions.
A protective SiO2 layer between the CdTe and Pd electrodes prevented interface reactions and the associated drop in E c,max.

Conclusions:

Interface reactivity between metal electrodes and CdTe nanocrystals significantly affects their electrical properties.
Protective dielectric layers can effectively passivate interfaces, preserving nanocrystal electrical performance.
These findings are critical for the reliable integration of nanocrystals into electronic devices and novel nanomaterial fabrication.