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Exciton and biexciton luminescence from single GaN/AlN quantum dots in nanowires
Julien Renard1, Rudeesun Songmuang, Catherine Bougerol
1CEA-CNRS group "Nanophysique et Semiconducteurs", INAC/SP2M,17 rue des Martyrs 38054 Grenoble Cedex 9, France. julien.renard@cea.fr
Abstract:
We present a microphotoluminescence study of single GaN/AlN quantum dots embedded in single nanowires. At low excitation power, single exciton lines with full width at half-maximum as narrow as 1 meV are observed. The study of the excitation power dependence of the emission allows us to identify the biexciton transitions with binding energies ranging from 20 to 40 meV.
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